FDG329N

FDG329N Datasheet

FDG329N

Part	Datasheet
FDG329N	FDG329N (pdf)

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FDG329N October 2001 FDG329N 20V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS ON and gate charge QG in a small package. • DC/DC converter • Power management • Load switch • A, 20 V. RDS ON = 90 VGS = V. RDS ON = 115 VGS = V • Fast switching speed • Low gate charge nC typical • High performance trench technology for extremely low RDS ON • High power and current handling capability. Pin 1 SC70-6 Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDG329N 7’’ Ratings 20 ± 12 6 -55 to +150 300 333 Tape width 8mm Units V A W °C °C/W °C/W Quantity 3000 units 2001 Fairchild Semiconductor International FDG329N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 16 V, VGS = 12 V, VGS = V, VGS = 0 V VDS = 0 V VDS = 0 V mV/°C 100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient

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FDG329N

October 2001

FDG329N
20V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS ON and gate charge QG in a small package.
• DC/DC converter
• Power management
• Load switch
• A, 20 V.

RDS ON = 90 VGS = V. RDS ON = 115 VGS = V
• Fast switching speed
• Low gate charge nC typical
• High performance trench technology for extremely low RDS ON
• High power and current handling capability.

Pin 1

SC70-6

Absolute Maximum Ratings TA=25oC unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation for Single Operation

Note 1a Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDG329N
7’’

Ratings
20 ± 12
6 -55 to +150
300 333

Tape width 8mm

Units

V A W °C
°C/W °C/W

Quantity 3000 units
2001 Fairchild Semiconductor International

FDG329N

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

Breakdown Voltage Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V,

ID = 250 µA

ID = 250 µA,Referenced to 25°C

VDS = 16 V, VGS = 12 V, VGS = V,

VGS = 0 V VDS = 0 V VDS = 0 V
mV/°C
100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient

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Datasheet ID: FDG329N 514167