FFB2907A

FFB2907A Datasheet

FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General-Purpose Amplifier

Part	Datasheet
FFB2907A	FFB2907A (pdf)

Related Parts	Information
FFB2907A_D87Z	FFB2907A_D87Z

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FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General-Purpose Amplifier January 2014 FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General-Purpose Amplifier This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. Sourced from Process Block Diagram E2 B2 SC70-6 Mark .2F B1 pin #1 E1 Figure FFB2907A Device Package C2 E1 C1 B2 E2 pin #1 B1 SuperSOT -6 Mark .2F Dot denotes pin #1 Figure FMB2907A Device Package E4B4 C4C4 SOIC-16 Mark: C2C2 C1 pin #1 C1 MMPQ2907A Figure MMPQ2907A Device Package Figure FFB2907A Internal Connections Figure FMB2907A Internal Connections Figure MMPQ2907A Internal Connections 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General-Purpose Amplifier Ordering Information Part Number FFB2907A FMB2907A MMPQ2907A Top Mark .2F .2F MMPQ2907A Package SC70 6L SSOT 6L SOIC 16L Packing Method Tape and Reel Tape and Reel Tape and Reel Absolute Maximum Ratings 1 , 2 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Junction and Storage Temperature Value -60 -60 -600 -55 to +150 Unit V mA °C Notes These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal Characteristics 3 Values are at TA = 25°C unless otherwise noted. Parameter Total Device Dissipation Derate Above 25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient, Effective 4 Die Thermal Resistance, Junction to Ambient, Each Die FFB2907A 300 415 Max. FMB2907A 700 180 Unit MMPQ2907A 1,000 mW/°C °C/W Note PCB size FR-4 76 x 114 x mm3 inch x inch x inch with minimum land pattern size. 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General-Purpose Amplifier Electrical Characteristics 4 Values are at TA = 25°C unless otherwise noted. Parameter V BR CEO Collector-Emitter Breakdown Voltage 4 V BR CBO V BR EBO

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FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General-Purpose Amplifier

January 2014

FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General-Purpose Amplifier

This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. Sourced from Process

Block Diagram

E2 B2

SC70-6

Mark .2F

B1 pin #1 E1

Figure FFB2907A Device Package

C2 E1 C1

B2 E2 pin #1 B1

SuperSOT -6

Mark .2F Dot denotes pin #1

Figure FMB2907A Device Package

E4B4

C4C4

SOIC-16

Mark:

C2C2 C1 pin #1 C1

MMPQ2907A

Figure MMPQ2907A Device Package

Figure FFB2907A Internal Connections

Figure FMB2907A Internal Connections

Figure MMPQ2907A Internal Connections
1998 Fairchild Semiconductor Corporation

FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General-Purpose Amplifier
Ordering Information

Part Number FFB2907A FMB2907A

MMPQ2907A

Top Mark .2F .2F

MMPQ2907A

Package SC70 6L SSOT 6L SOIC 16L

Packing Method Tape and Reel Tape and Reel Tape and Reel

Absolute Maximum Ratings 1 , 2

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

VCEO VCBO VEBO

IC TJ, TSTG

Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Junction and Storage Temperature

Value -60 -60 -600
-55 to +150

Unit V mA °C

Notes These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.

Thermal Characteristics 3

Values are at TA = 25°C unless otherwise noted.

Parameter

Total Device Dissipation

Derate Above 25°C

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Ambient, Effective 4 Die

Thermal Resistance, Junction to Ambient, Each Die

FFB2907A 300 415

Max. FMB2907A
700 180

Unit MMPQ2907A
1,000
mW/°C
°C/W

Note PCB size FR-4 76 x 114 x mm3 inch x inch x inch with minimum land pattern size.
1998 Fairchild Semiconductor Corporation

FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General-Purpose Amplifier

Electrical Characteristics 4

Values are at TA = 25°C unless otherwise noted.

Parameter

V BR CEO

Collector-Emitter Breakdown Voltage 4

V BR CBO V BR EBO

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Datasheet ID: FFB2907A 514884