FDFMA3P029Z

FDFMA3P029Z Datasheet

FDFMA3P029Z Integrated P-Channel MOSFET and Schottky Diode

Part	Datasheet
FDFMA3P029Z	FDFMA3P029Z (pdf)

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FDFMA3P029Z Integrated P-Channel MOSFET and Schottky Diode January 2013 FDFMA3P029Z Integrated P-Channel MOSFET and Schottky Diode V, A, 87 mΩ Features MOSFET - Max rDS on = 87 mΩ at VGS = V, ID = A - Max rDS on = 152 mΩ at VGS = V, ID = A - HBM ESD protection level > 2 KV typical Note 3 Schottky - VF < V 500 mA - Low profile - mm maximum - in the new package MicroFET 2x2 mm - RoHS Compliant This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with very low on-state resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. PIN 1 A NC D A1 NC 2 6C 5G Bottom MicroFET 2x2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Parameter TJ, TSTG VRRM IO Thermal Characteristics Note 1a Note 1a Note 1b Ratings ±25 -15 to +150 20 2 Units V °C V A Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a Note 1b Note 1c Note 1d °C/W Device Marking 3P2 Device FDFMA3P029Z Package MicroFET 2X2 Reel Size 7” Tape Width 8 mm Quantity 3000 units 2013 Fairchild Semiconductor Corporation FDFMA3P029Z Integrated P-Channel MOSFET and Schottky Diode Electrical Characteristics TJ = 25 °C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = uA, VGS = 0 V ID = uA, referenced to 25 °C VDS = V, VGS = 0 V VGS = ±25 V, VDS = 0 V On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On-Resistance Forward Transconductance Gate Resistance VGS = VDS, ID = uA ID = uA, referenced to 25 °C VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A, TJ =125 °C VDS = V, ID = A Dynamic Characteristics Ciss Coss Crss VDS = V, VGS = 0 V, f = 1 MHz Switching Characteristics td on tr td off tf Qg TOT

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FDFMA3P029Z Integrated P-Channel MOSFET and Schottky Diode

January 2013

FDFMA3P029Z

Integrated P-Channel MOSFET and Schottky Diode

V, A, 87 mΩ Features

MOSFET
- Max rDS on = 87 mΩ at VGS = V, ID = A - Max rDS on = 152 mΩ at VGS = V, ID = A - HBM ESD protection level > 2 KV typical Note 3

Schottky
- VF < V 500 mA - Low profile - mm maximum - in the new package

MicroFET 2x2 mm - RoHS Compliant

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with very low on-state resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses.

The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

PIN 1 A NC D

A1 NC 2
6C 5G

Bottom

MicroFET 2x2

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol VDS VGS ID

Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed Power Dissipation

Parameter

TJ, TSTG VRRM IO

Thermal Characteristics

Note 1a Note 1a Note 1b

Ratings ±25 -15
to +150 20 2

Units V
°C V A

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a

Note 1b

Note 1c

Note 1d
°C/W

Device Marking 3P2

Device FDFMA3P029Z

Package MicroFET 2X2

Reel Size 7”

Tape Width 8 mm

Quantity 3000 units
2013 Fairchild Semiconductor Corporation

FDFMA3P029Z Integrated P-Channel MOSFET and Schottky Diode

Electrical Characteristics TJ = 25 °C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = uA, VGS = 0 V ID = uA, referenced to 25 °C

VDS = V, VGS = 0 V VGS = ±25 V, VDS = 0 V

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On-Resistance

Forward Transconductance

Gate Resistance

VGS = VDS, ID = uA

ID = uA, referenced to 25 °C

VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A, TJ =125 °C VDS = V, ID = A

Dynamic Characteristics

Ciss Coss Crss

VDS = V, VGS = 0 V, f = 1 MHz

Switching Characteristics
td on tr td off tf

Qg TOT

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Datasheet ID: FDFMA3P029Z 514155