FDFMA2P857

FDFMA2P857 Datasheet

FDFMA2P857 Integrated P-Channel MOSFET and Schottky Diode

Part	Datasheet
FDFMA2P857	FDFMA2P857 (pdf)

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FDFMA2P857 Integrated P-Channel MOSFET and Schottky Diode July 2014 FDFMA2P857 Integrated P-Channel MOSFET and Schottky Diode 120mΩ Features MOSFET: - Max rDS on = 120mΩ at VGS = ID = - Max rDS on = 160mΩ at VGS = ID = - Max rDS on = 240mΩ at VGS = ID = Schottky: - VF < 0.54V 1A - Low profile - mm maximum - in the new pack- age MicroFET 2x2 mm - RoHS Compliant This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications. Pin 1 A NC D MicroFET 2x2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS TJ, TSTG VRRM IO Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Thermal Characteristics Note 1a Note 1a Note 1b Ratings 20 ±8 to +150 30 1 Units V °C V A Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking Device FDFMA2P857 Package MicroFET 2x2 2008 Fairchild Semiconductor Corporation Note 1a Note 1b Note 1c Note 1d °C/W Reel Size 7’’ Tape Width 8mm Quantity 3000 units Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = VGS = 0V Breakdown Voltage Temperature Coefficient ID = referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = VGS = 0V IGSS Gate to Source Leakage Current VGS = ±8V, VDS = 0V On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = ID = referenced to 25°C VGS = ID = VGS = ID = VGS = ID = VGS = ID = TJ = 125°C VDS = ID = Dynamic Characteristics Ciss Coss Crss VDS = VGS = 0V, f = 1.0MHz

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FDFMA2P857 Integrated P-Channel MOSFET and Schottky Diode

July 2014

FDFMA2P857

Integrated P-Channel MOSFET and Schottky Diode
120mΩ Features

MOSFET:
- Max rDS on = 120mΩ at VGS = ID = - Max rDS on = 160mΩ at VGS = ID = - Max rDS on = 240mΩ at VGS = ID =

Schottky:
- VF < 0.54V 1A - Low profile - mm maximum - in the new pack-
age MicroFET 2x2 mm - RoHS Compliant

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.

The MicroFET 2x2 package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications.

Pin 1 A NC D

MicroFET 2x2

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDSS VGSS

TJ, TSTG VRRM IO

Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous

Thermal Characteristics

Note 1a

Note 1a Note 1b

Ratings 20 ±8
to +150 30 1

Units V
°C V A

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Device Marking

Device FDFMA2P857

Package MicroFET 2x2
2008 Fairchild Semiconductor Corporation

Note 1a

Note 1b

Note 1c

Note 1d
°C/W

Reel Size 7’’

Tape Width 8mm

Quantity 3000 units

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = VGS = 0V

Breakdown Voltage Temperature Coefficient

ID = referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = VGS = 0V

IGSS

Gate to Source Leakage Current

VGS = ±8V, VDS = 0V

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID =

ID = referenced to 25°C

VGS = ID = VGS = ID = VGS = ID = VGS = ID = TJ = 125°C VDS = ID =

Dynamic Characteristics

Ciss Coss Crss

VDS = VGS = 0V, f = 1.0MHz

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Datasheet ID: FDFMA2P857 514154