BF199_J35Z
BF199_J35Z Datasheet
BF199
| Part | Datasheet |
|---|---|
BF199_J35Z |
BF199_J35Z (pdf) |
| Related Parts | Information |
|---|---|
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BF199_D74Z |
BF199_D74Z |
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BF199 |
BF199 |
| PDF Datasheet Preview |
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| BF199 NPN RF Transistor BF199 Absolute Maximum Ratings* TC=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. TO-92 Collector Emitter Base Value 25 40 50 - 55 ~ 150 Units V mA °C NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CEO Collector-Emitter Breakdown Voltage * V BR CBO Collector-Base BreakdownVoltage V BR EBO Emitter-Base Breakdown Voltage ICES Collector Cut-off Current On Characteristics IC = 1.0mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCE = 30V, IE = 0 DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage |
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