FDD6776A

FDD6776A Datasheet


FDD6776A / FDU6776A_F071 N-Channel Power MOSFET

Part Datasheet
FDD6776A FDD6776A FDD6776A (pdf)
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FDD6776A / FDU6776A_F071 N-Channel Power MOSFET

January 2009

FDD6776A / FDU6776A_F071

N-Channel MOSFET
25 V,
- Max rDS on = at VGS = 10 V, ID = A - Max rDS on = at VGS = V, ID = A - 100% UIL test - RoHS Compliant

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS on and fast switching speed.
- Vcore DC-DC for Desktop Computers and Servers - VRM for Intermediate Bus Architecture

S D-PAK TO-252

Short-Lead I-PAK

TO-251AA

MOSFET Maximum Ratings TC = 25 °C unless otherwise noted

Symbol VDS VGS

EAS PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed

TC = 25 °C TC = 25 °C TA = 25 °C

Single Pulse Avalanche Energy

Power Dissipation

TC = 25 °C

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a Note 3

Note 1a

Ratings 25 ±20 30 54 100 32 39
-55 to +175

Units V
mJ W °C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a
°C/W

Device Marking FDD6776A FDU6776A

Device FDD6776A FDU6776A_F071

Package D-PAK TO-252

TO-251AA

Reel Size 13 ’’

N/A Tube

Tape Width 12 mm N/A

Quantity 2500 units
75 units
2009 Fairchild Semiconductor Corporation

FDD6776A / FDU6776A_F071 N-Channel Power MOSFET

Electrical Characteristics TJ = 25 °C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = 250 µA, VGS = 0 V

Breakdown Voltage Temperature Coefficient

ID = 250 µA, referenced to 25 °C

IDSS

Zero Gate Voltage Drain Current

VDS = 20 V, VGS = 0 V

IGSS

Gate to Source Leakage Current

VGS = ±20 V, VDS = 0 V

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250 µA

ID = 250 µA, referenced to 25 °C

VGS = 10 V, ID = A VGS = 10 V, ID = A Short-Lead I-PAK version

VGS = V, ID = A VGS = V, ID = A Short-Lead I-PAK version

VGS = 10 V, ID = A, TJ = 150 °C VDS = 5 V, ID = A
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Datasheet ID: FDD6776A 514133