FDD6680A
FDD6680A Datasheet
FDD6680A/FDU6680A
| Part | Datasheet |
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FDD6680A |
FDD6680A (pdf) |
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| FDD6680A/FDU6680A June 2003 FDD6680A/FDU6680A 30V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON , fast switching speed and extremely low RDS ON in a small package. • DC/DC converter • Motor Drives • 56 A, 30 V RDS ON = VGS = 10 V RDS ON = 13 VGS = V • Low gate charge • Fast Switching • High performance trench technology for extremely low RDS ON S DTO-P-2A5K2 TO-252 I-PAK TO-251AA Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Note 3 Note 1a Pulsed Note 1a Power Dissipation Note 3 Note 1a Note 1b Operating and Storage Junction Temperature Range Ratings 30 ±20 56 14 100 60 to +175 Thermal Characteristics Thermal Resistance, Junction-to-Case Note 1 Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Package FDD6680A FDD6680A D-PAK TO-252 FDU6680A FDU6680A I-PAK TO-251 Reel Size 13’’ Tube Tape width 12mm N/A Units °C/W Quantity 2500 units 2003 Fairchild Semiconductor Corp. FDD6680A/FDU6680A Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Avalanche Ratings Note 2 Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 14A Drain-Source Avalanche Current Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current |
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