FDU6680

FDU6680 Datasheet

FDD6680/FDU6680

Part	Datasheet
FDU6680	FDU6680 (pdf)

Related Parts	Information
FDD6680	FDD6680

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FDD6680/FDU6680 November 2004 FDD6680 / FDU6680 30V N-Channel MOSFET This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. • DC/DC converter • Motor Drives • 46 A, 30 V RDS ON = 10 VGS = 10 V RDS ON = 15 VGS = V • Low gate charge • Fast Switching Speed • High performance trench technology for extremely low RDS ON S DTO-P-2A5K2 TO-252 I-PAK TO-251AA Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Note 3 Note 1a Pulsed Note 1a Power Dissipation Note 3 Note 1a Note 1b Operating and Storage Junction Temperature Range Ratings 30 ±20 46 12 100 56 to +175 Thermal Characteristics Thermal Resistance, Junction-to-Case Note 1 Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Package FDD6680 FDD6680 D-PAK TO-252 FDU6680 FDU6680 I-PAK TO-251 Reel Size 13’’ Tube Tape width 12mm N/A Units °C/W Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDD6680/FDU6680 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Avalanche Ratings Note 2 Drain-Source Avalanche Energy Single Pulse, VDD = 25 V, ID= 12A Drain-Source Avalanche Current Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current

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FDD6680/FDU6680

November 2004

FDD6680 / FDU6680
30V N-Channel MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
• DC/DC converter
• Motor Drives
• 46 A, 30 V

RDS ON = 10 VGS = 10 V RDS ON = 15 VGS = V
• Low gate charge
• Fast Switching Speed
• High performance trench technology for extremely low RDS ON

S DTO-P-2A5K2 TO-252

I-PAK TO-251AA

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

TJ, TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Note 3

Note 1a

Pulsed

Note 1a

Power Dissipation

Note 3

Note 1a

Note 1b

Operating and Storage Junction Temperature Range

Ratings
30 ±20 46 12 100 56 to +175

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Note 1

Thermal Resistance, Junction-to-Ambient Note 1a

Note 1b
Package Marking and Ordering Information

Device Marking

Device

Package

FDD6680

FDD6680

D-PAK TO-252

FDU6680

FDU6680

I-PAK TO-251

Reel Size 13’’ Tube

Tape width 12mm N/A

Units
°C/W

Quantity 2500 units
2004 Fairchild Semiconductor Corporation

FDD6680/FDU6680

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Drain-Source Avalanche Ratings Note 2

Drain-Source Avalanche Energy Single Pulse, VDD = 25 V, ID= 12A

Drain-Source Avalanche Current

Off Characteristics

BVDSS

IDSS

Breakdown Voltage

Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C

VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

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Datasheet ID: FDU6680 514128