AT49BV040B
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AT49BV040B-JU (pdf) |
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AT49BV040B-TU |
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AT49BV040B-VU |
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• Single Supply for Read and Write 2.7V to 5.5V • Fast Read Access Time 70 ns VCC = 2.7V to 3.6V 55 ns VCC = 4.5V to 5.5V • Internal Program Control and Timer • Flexible Sector Architecture One 16K Bytes Boot Sector with Programming Lockout Two 8K Bytes Parameter Sectors Eight Main Memory Sectors One 32K Bytes, Seven 64K Bytes • Fast Erase Cycle Time 8 Seconds • Byte-by-Byte Programming 10 µs/Byte Typical • Hardware Data Protection • DATA Polling or Toggle Bit for End of Program Detection • Low Power Dissipation 20 mA Active Current 25 µA CMOS Standby Current for VCC = 2.7V to 3.6V 30 µA CMOS Standby Current for VCC = 4.5V to 5.5V • Minimum 100,000 Write Cycles 4-megabit 512K x 8 Flash Memory AT49BV040B The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns VCC = 2.7V to 3.6V and an access time of 55 ns VCC = 4.5V to 5.5V . The power dissipation over the industrial temperature range with VCC = 2.7V to 3.6V is 72 mW and is 110 mW with VCC = 4.5V to 5.5V. When the device is deselected, the CMOS standby current is less than 30 µA. To allow for simple in-system reprogrammability, the AT49BV040B does not require high input voltages for programming. Reading data out of the device is similar to reading from an EPROM it has standard CE, OE, and WE inputs to avoid bus contention. Reprogramming the AT49BV040B is performed by erasing a sector of data and then programming on a byte by byte basis. The byte programming time is a fast 10 µs. The end of a program or erase cycle can be optionally detected by the DATA polling or toggle bit feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 100,000 cycles. The device is erased by executing a chip erase or a sector erase command sequence the device internally controls the erase operations. The memory array of the AT49BV040B is organized into two 8K byte parameter sectors, eight main memory sectors, and one boot sector. The device has the capability to protect the data in the boot sector this feature is enabled by a command sequence. The 16K-byte boot sector includes a reprogramming lock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector is permanently protected from being reprogrammed. Pin Configurations Pin Name A0 - A18 CE OE WE I/O0 - I/O7 32-lead PLCC Top View Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs 4 A12 3 A15 2 A16 1 A18 32 VCC 31 WE 30 A17 A7 5 A6 6 A5 7 A4 8 A3 9 A2 10 A1 11 A0 12 I/O0 13 29 A14 28 A13 27 A8 26 A9 25 A11 24 OE 23 A10 22 CE 21 I/O7 I/O1 14 I/O2 15 GND 16 I/O3 17 I/O4 18 I/O5 19 I/O6 20 32-lead VSOP or 32-lead TSOP Top View Type 1 A11 1 A9 2 A8 3 A13 4 A14 5 A17 6 WE 7 VCC 8 A18 9 A16 10 A15 11 A12 12 A7 13 A6 14 A5 15 A4 16 2 AT49BV040B 32 OE 31 A10 30 CE 29 I/O7 28 I/O6 27 I/O5 26 I/O4 25 I/O3 24 GND 23 I/O2 22 I/O1 21 I/O0 20 A0 19 A1 18 A2 17 A3 Block Diagram AT49BV040B VCC GND OE WE CE ADDRESS INPUTS CONTROL LOGIC Y DECODER X DECODER DATA INPUTS/OUTPUTS I/O7 - I/O0 INPUT/OUTPUT BUFFERS PROGRAM DATA LATCHES Y-GATING MAIN MEMORY SECTOR 8 64K BYTES MAIN MEMORY SECTOR 7 64K BYTES MAIN MEMORY SECTOR 6 64K BYTES MAIN MEMORY SECTOR 5 Ordering Information Green Package Pb/Halide-free ICC mA Active Ordering Code AT49BV040B-JU AT49BV040B-TU AT49BV040B-VU Package 32J 32T 32V Operation Range Industrial -40° to 85° C Package Type 32-lead, Plastic, J-leaded Chip Carrier Package PLCC 32-lead, Thin Small Outline Package TSOP 32-lead, Thin Small Outline Package VSOP 16 AT49BV040B Packaging Information 32J PLCC AT49BV040B PIN NO. 1 IDENTIFIER e D1 D B1 E2 A2 A1 A 0.51 0.020 MAX 3X COMMON DIMENSIONS Unit of Measure = mm This package conforms to JEDEC reference MS-016, Variation AE. Dimensions D1 and E1 do not include mold protrusion. Allowable protrusion is mm per side. Dimension D1 and E1 include mold mismatch and are measured at the extreme material condition at the upper or lower parting line. Lead coplanarity is mm maximum. SYMBOL MIN NOM MAX NOTE Note 2 Note 2 10/04/01 TITLE 2325 Orchard Parkway 32J, 32-lead, Plastic J-leaded Chip Carrier PLCC R San Jose, CA 95131 32T TSOP PIN 1 0º ~ 8º c Pin 1 Identifier SEATING PLANE GAGE PLANE This package conforms to JEDEC reference MO-142, Variation BD. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is mm per side and on D1 is mm per side. Lead coplanarity is mm maximum. COMMON DIMENSIONS Unit of Measure = mm SYMBOL A A1 A2 D D1 E L L1 b c e MIN NOM MAX BASIC • Combined the 3V and 5V part into one datasheet BV . • Removed the speed of the part form the ordering information table. • Changed the address hold time to 20 ns. 20 AT49BV040B Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel 1 408 441-0311 Fax 1 408 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel 41 26-426-5555 Fax 41 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel 852 2721-9778 Fax 852 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel 81 3-3523-3551 Fax 81 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel 1 408 441-0311 Fax 1 408 436-4314 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel 1 408 441-0311 Fax 1 408 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel 33 2-40-18-18-18 Fax 33 2-40-18-19-60 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel 33 4-42-53-60-00 Fax 33 4-42-53-60-01 1150 East Cheyenne Mtn. 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