FJY4006R
FJY4006R Datasheet
FJY4006R PNP Epitaxial Silicon Transistor
| Part | Datasheet |
|---|---|
FJY4006R |
FJY4006R (pdf) |
| PDF Datasheet Preview |
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| FJY4006R PNP Epitaxial Silicon Transistor FJY4006R PNP Epitaxial Silicon Transistor July 2007 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJY3006R E B SOT - 523F Equivalent Circuit Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current TSTG Storage Temperature Range Junction Temperature Collector Power Dissipation, by * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Value -50 -50 -10 -100 -55~150 200 Thermal Characteristics* Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Ambient * Minimum land pad size. Electrical Characteristics* TC = 25°C unless otherwise noted Parameter Test Condition V BR CBO Collector-Emitter Breakdown Voltage IC = -10 uA, IE = 0 V BR CEO Collector-Base Breakdown Voltage IC = -100 uA, IB = 0 ICBO Collector-Cutoff Current VCB = -40 V, IE = 0 DC Current Gain VCE = -5 V, IC = -5mA VCE sat |
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