FDD6672A

FDD6672A Datasheet

FDD6672A

Part	Datasheet
FDD6672A	FDD6672A (pdf)

PDF Datasheet Preview
FDD6672A April 2001 FDD6672A 30V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed. • DC/DC converter • 65 A, 30 V. RDS ON = VGS = V RDS ON = 8 VGS = 10 V • High performance trench technology for extremely low RDS ON • Low gate charge 33 nC typical • High power and current handling capability S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1a Pulsed Maximum Power Dissipation TC = 25°C Note 1 TA = 25°C Note 1a TA = 25°C Note 1b Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Note 1 Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDD6672A FDD6672A 13’’ Ratings 30 ±12 65 100 70 -55 to +150 Tape width 16mm Units °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDD6672A Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V IGSSF Leakage, Forward VGS = 12 V, VDS = 0 V IGSSR VGS = V VDS = 0 V mV/°C 100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on

PDF Datasheet Preview

FDD6672A

April 2001

FDD6672A
30V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
• DC/DC converter
• 65 A, 30 V.

RDS ON = VGS = V RDS ON = 8 VGS = 10 V
• High performance trench technology for extremely low RDS ON
• Low gate charge 33 nC typical
• High power and current handling capability

S TO-252

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

TJ, TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current Continuous

Note 1a

Pulsed

Maximum Power Dissipation TC = 25°C Note 1

TA = 25°C Note 1a

TA = 25°C Note 1b Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Note 1 Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDD6672A

FDD6672A
13’’

Ratings
30 ±12 65 100 70 -55 to +150

Tape width 16mm

Units
°C/W °C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDD6672A

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V

IGSSF

Leakage, Forward

VGS = 12 V, VDS = 0 V

IGSSR

VGS = V VDS = 0 V
mV/°C
100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDD6672A Datasheet file may be downloaded here without warranties.

Datasheet ID: FDD6672A 514125