FQAF17P10

FQAF17P10 Datasheet


FQAF17P10

Part Datasheet
FQAF17P10 FQAF17P10 FQAF17P10 (pdf)
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FQAF17P10

FQAF17P10
100V P-Channel MOSFET

QFET TM

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
• -12.4A, -100V, RDS on = = -10 V
• Low gate charge typical 30 nC
• Low Crss typical 100 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

TO-3PF

FQAF Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

FQAF17P10 -100 ± 30 580 56
-55 to +175 300

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W °C/W
2002 Fairchild Semiconductor Corporation

FQAF17P10

Electrical Characteristics
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Datasheet ID: FQAF17P10 515070