BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS
Part | Datasheet |
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BDW84A-S (pdf) |
Related Parts | Information |
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BDW84B-S |
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BDW84-S |
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BDW84D-S |
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BDW84C-S |
PDF Datasheet Preview |
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BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS G Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D G 125 W at 25°C Case Temperature G 15 A Continuous Collector Current G Minimum hFE of 750 at 3 V, 6 A SOT-93 PACKAGE TOP VIEW 1 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING VALUE UNIT BDW84 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage IB = 0 see Note 1 Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D VCBO VCEO VEBO IC IB Ptot Operating temperature range Tstg Operating free-air temperature range -100 -120 -100 -120 -65 to +150 -65 to +150 -65 to +150 NOTES These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 1 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = -5 mA, RBE = 100 VBE off = 0, RS = VCC = -20 V. PRODUCT INFORMATION BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX BDW84 Collector-emitter V BR CEO breakdown voltage |
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