FDD6670AS
FDD6670AS Datasheet
FDD6670AS
| Part | Datasheet |
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FDD6670AS |
FDD6670AS (pdf) |
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| FDD6670AS May 2005 FDD6670AS 30V N-Channel SyncFET The FDD6670AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDD6670AS includes a patented combination of a MOSFET monolithically integrated with a schottky diode. The performance of the FDD6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode. • 76 A, 30 V RDS ON max= VGS = 10 V RDS ON max= VGS = V • Includes SyncFET Schottky body diode • Low gate charge 29nC typical • High performance trench technology for extremely low RDS ON • High power and current handling capability • DC/DC converter • Low side notebook S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation Note 3 Note 1a Note 1 Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Note 1 Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDD6670AS FDD6670AS 13’’ Ratings 30 ±20 76 100 70 to +150 40 96 Tape width 16mm Units °C/W °C/W °C/W Quantity 2500 units 2005 Fairchild Semiconductor Corporation FDD6670AS Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Avalanche Ratings Note 2 WDSS Drain-Source Avalanche Energy Drain-Source Avalanche Current Single Pulse, VDD = 15 V, ID=14A Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ= 125°C VGS = ±20 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static |
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