FDU6296
FDU6296 Datasheet
FDD6296/FDU6296
| Part | Datasheet |
|---|---|
FDU6296 |
FDU6296 (pdf) |
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| FDD6296/FDU6296 June 2004 FDD6296/FDU6296 30V N-Channel Fast Switching MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed. • DC/DC converter • Power management • 50A, 30 V RDS ON = VGS = 10 V RDS ON = VGS = V • Low gate charge • Fast switching • High performance trench technology for extremely low RDS ON S DTO-P-2A5K2 TO-252 I-PAK TO-251AA Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Note 3 Note 1a Pulsed Note 1a Power Dissipation Note 3 Note 1a Note 1b Operating and Storage Junction Temperature Range Ratings 30 ± 20 50 15 100 52 to +175 Thermal Characteristics Thermal Resistance, Junction-to-Case Note 1 Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Ambient Note 1b Package Marking and Ordering Information Device Marking Device Package Reel Size FDD6296 FDD6296 D-PAK TO-252 13’’ FDU6296 FDU2696 I-PAK TO-251 Tube Tape width 12mm N/A Units °C °C/W Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDD6296/FDU6296 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Avalanche Ratings Note 2 Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=15A Drain-Source Avalanche Current Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Leakage VGS =± 20 V, VDS = 0 V On Characteristics Note 2 VGS th RDS on Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static |
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