FDD45AN06LA0_F085

FDD45AN06LA0_F085 Datasheet


FDD45AN06LA0

Part Datasheet
FDD45AN06LA0_F085 FDD45AN06LA0_F085 FDD45AN06LA0_F085 (pdf)
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FDD45AN06LA0 FDD45AN06LA0 FDD45AN06LA0
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FDD45AN06LA0

February 2004

FDD45AN06LA0

N-Channel MOSFET 60V, 22A,
• rDS ON = Typ. , VGS = 5V, ID = 22A
• Qg tot = 8.3nC Typ. , VGS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability Single Pulse and Repetitive Pulse
• Qualified to AEC Q101

Formerly developmental type 83535
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems

DRAIN FLANGE D

GATE SOURCE

TO-252AA

FDD SERIES

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS VGS

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 25oC, VGS = 5V Continuous TC = 100oC, VGS = 5V Continuous TA = 25oC, VGS = 5V, = 52oC/W Pulsed

EAS PD TJ, TSTG

Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC Operating and Storage Temperature

Ratings 60 ±20
25 22 16 Figure 4 15 55 -55 to 175

Units V

A mJ W/oC

Thermal Characteristics

Thermal Resistance Junction to Case TO-252

Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
100 52
oC/W oC/W oC/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
2004 Fairchild Semiconductor Corporation

FDD45AN06LA0
Package Marking and Ordering Information

Device Marking FDD45AN06LA0

Device FDD45AN06LA0

Package TO-252AA

Reel Size 330mm

Tape Width 16mm

Quantity 2500 units

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 50V VGS = 0V

TC = 150oC

VGS = ±20V

On Characteristics

VGS TH

Gate to Source Threshold Voltage
rDS ON

Drain to Source On Resistance

VGS = VDS, ID = 250µA ID = 25A, VGS = 10V ID = 22A, VGS = 5V ID = 22A, VGS = 5V, TJ = 175oC

Dynamic Characteristics

CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd

VDS = 25V, VGS = 0V, f = 1MHz

VGS = 0V to 5V VGS = 0V to 1V

VDD = 30V ID = 22A Ig = 1.0mA

Switching Characteristics VGS = 5V
tON td ON tr td OFF tf tOFF

Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time

VDD = 30V, ID = 22A VGS = 5V, RGS =

Drain-Source Diode Characteristics

Source to Drain Diode Voltage

Notes 1 Starting TJ = 25°C, L = 90µH, IAS = 18A.

ISD = 22A ISD = 11A ISD = 22A, dISD/dt = 100A/µs ISD = 22A, dISD/dt = 100A/µs

Min Typ Max Units
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Datasheet ID: FDD45AN06LA0_F085 514117