FDB5690
FDB5690 Datasheet
FDP5690/FDB5690
| Part | Datasheet |
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FDB5690 |
FDB5690 (pdf) |
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FDP5690 |
FDP5690 |
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| FDP5690/FDB5690 July 2000 FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS on specifications resulting in DC/DC power supply designs with higher overall efficiency. • 32 A, 60 V. RDS ON = VGS = 10 V RDS ON = VGS = 6 V. • Critical DC electrical parameters specified at evevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • High performance trench technology for extremely low RDS ON . • 175°C maximum junction temperature rating. TO-220 FDP Series TO-263AB FDB Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter FDP5690 FDB5690 VDSS VGSS ID TJ, TSTG Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous - Pulsed Total Power Dissipation TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 60 ±20 32 100 58 -65 to +175 Units W/°C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size FDB5690 FDB5690 13’’ FDP5690 FDP5690 Tube Tape Width 24mm N/A °C/W °C/W Quantity 800 45 Fairchild Semiconductor International FDP5690/FDB5690 Electrical Characteristics Parameter Tc = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note1 WDSS Single Pulse Drain-Source Avalanche Energy VDD = 30 V, ID = 32A Maximum Drain-Source Avalanche Current Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C mV/°C Coefficient IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V IGSSR VGS = -20 V, VDS = 0 V -100 On Characteristics Note 1 VGS th |
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