AOD452AL_008
AOD452AL_008 Datasheet
AOD452A N-Channel SDMOSTM POWER Transistor
| Part | Datasheet |
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AOD452AL_008 |
AOD452AL_008 (pdf) |
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| AOD452A N-Channel SDMOSTM POWER Transistor The AOD452A is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS V = 25V ID = 55A RDS ON < RDS ON V GS = 10V VGS = 10V VGS = 4.5V 100% UIS Tested! 100% Rg Tested! TO-252 Top View D-PAK Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C Pulsed Forward Diode CurrentC Avalanche Current C Repetitive avalanche energy L=50µH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 25 ±20 55 43 120 35 31 50 25 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Maximum Junction-to-TAB B t 10s Steady-State Steady-State Steady-State Typ 39 Max 20 50 3 Alpha & Omega Semiconductor, Ltd. Units V W °C Units °C/W °C/W °C/W °C/W AOD452A Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units STATIC PARAMETERS |
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