FDU2572
FDU2572 Datasheet
FDD2572 / FDU2572
| Part | Datasheet |
|---|---|
FDU2572 |
FDU2572 (pdf) |
| Related Parts | Information |
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FDD2572 |
FDD2572 |
| PDF Datasheet Preview |
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| FDD2572 / FDU2572 FDD2572 / FDU2572 N-Channel MOSFET 150V, 29A, • rDS ON = Typ. , VGS = 10V, ID = 9A • Qg tot = 26nC Typ. , VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability Single Pulse and Repetitive Pulse July 2014 • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier Formerly developmental type 82860 GATE DRAIN FLANGE DRAIN FLANGE SOURCE DRAIN GATE SOURCE TO-252AA FDD SERIES TO-251AA FDU SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 100oC, VGS = 10V Continuous Tamb = 25oC, VGS = 10V, = 52oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Case TO-251, TO-252 Thermal Resistance Junction to Ambient TO-251, TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Ratings 150 ±20 29 20 4 Figure 4 36 135 -55 to 175 100 52 Units V A mJ W W/oC oC/W oC/W oC/W 2002 Fairchild Semiconductor Corporation FDD2572 / FDU2572 Package Marking and Ordering Information Device Marking FDD2572 FDU2572 Device FDD2572 FDU2572 Package TO-252AA TO-251AA Reel Size 330mm Tube Tape Width 16mm N/A Quantity 2500 units 75 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 120V VGS = 0V TC = 150o VGS = ±20V 1 250 ±100 nA On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID=9A, VGS=10V ID = 4A, VGS = 6V, ID=9A, VGS=10V, TC=175oC Dynamic Characteristics CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz 1770 VGS = 0V to 10V VGS = 0V to 2V VDD = 75V |
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