FDS7088N3

FDS7088N3 Datasheet

FDS7088N3

Part	Datasheet
FDS7088N3	FDS7088N3 (pdf)

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FDS7088N3 February 2004 FDS7088N3 30V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • Synchronous rectifier • DC/DC converter • 21 A, 30 V RDS ON = 4 VGS = 10 V RDS ON = 5 VGS = V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching • FLMP SO-8 package Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS7088N3 FDS7088N3 13’’ Fairchild Semiconductor Corporation Ratings 30 ±20 21 60 to +150 Tape width 12mm Units V A W °C °C/W Quantity 2500 units FDS7088N3 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics Note 2 VGS th RDS on Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 21 A VGS = V, ID = 19 A VGS = 10 V, ID = 21 A, TJ = 125°C

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FDS7088N3

February 2004

FDS7088N3
30V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package.
• Synchronous rectifier
• DC/DC converter
• 21 A, 30 V

RDS ON = 4 VGS = 10 V RDS ON = 5 VGS = V
• High performance trench technology for extremely low RDS ON
• High power and current handling capability
• Fast switching
• FLMP SO-8 package Enhanced thermal performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS7088N3

FDS7088N3
13’’

Fairchild Semiconductor Corporation

Ratings
30 ±20 21 60 to +150

Tape width 12mm

Units

V A W °C
°C/W

Quantity 2500 units

FDS7088N3

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient
mV/°C

IDSS

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V

IGSS

Leakage

VGS = ±20 V, VDS = 0 V
±100 nA

On Characteristics Note 2

VGS th

RDS on

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static

Forward Transconductance

VDS = VGS,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VGS = 10 V, ID = 21 A VGS = V, ID = 19 A VGS = 10 V, ID = 21 A, TJ = 125°C

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Datasheet ID: FDS7088N3 514365