FDU8796_F071
FDU8796_F071 Datasheet
FDD8796/FDU8796 N-Channel MOSFET
| Part | Datasheet |
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FDU8796_F071 |
FDU8796_F071 (pdf) |
| Related Parts | Information |
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FDD8796 |
FDD8796 |
| PDF Datasheet Preview |
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| FDD8796/FDU8796 N-Channel MOSFET MPLEM ENTATION March 2015 FDD8796/FDU8796 N-Channel MOSFET 25V, 35A, This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS on and fast switching speed. Application - Vcore DC-DC for Desktop Computers and Servers - VRM for Intermediate Bus Architecture - Max rDS on = at VGS = 10V, ID = 35A - Max rDS on = at VGS = 4.5V, ID = 35A - Low gate charge Qg 10 = 37nC Typ , VGS = 10V - Low gate resistance - Avalanche rated and 100% tested AD FREE I - RoHS Compliant I-PAK TO-251AA Short Lead I-PAK MOSFET Maximum Ratings TC= 25°C unless otherwise noted Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package Limited -Continuous Die Limited -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature Thermal Characteristics Note 1 Note 2 Ratings 25 ±20 35 98 305 91 88 -55 to 175 Units V mJ W °C Thermal Resistance, Junction to Case TO_252, TO_251 Thermal Resistance, Junction to Ambient TO_252, TO_251 Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area Package Marking and Ordering Information °C/W °C/W °C/W Device Marking FDD8796 FDU8796 Device FDD8796 FDU8796 FDU8796_F071 Package TO-252AA TO-251AA TO-251AA Reel Size 13’’ N/A Tube N/A Tube Tape Width 16mm N/A N/A Quantity 2500 units 75 units 75 units 2006 Fairchild Semiconductor Corporation FDD8796/FDU8796 N-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current On Characteristics ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 20V VGS = 0V VGS = ±20V TJ = 150°C VGS th Gate to Source Threshold Voltage VGS = VDS, ID = 250µA Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C VGS = 10V, ID = 35A rDS on Drain to Source On Resistance VGS = 4.5V, ID = 35A VDS = 10V, ID = 35A TJ = 175°C Dynamic Characteristics Ciss Coss Crss RG |
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