FDD6N25TF
FDD6N25TF Datasheet
FDD6N25 / FDU6N25 250V N-Channel MOSFET
| Part | Datasheet |
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FDD6N25TF |
FDD6N25TF (pdf) |
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| FDD6N25 / FDU6N25 250V N-Channel MOSFET FDD6N25 / FDU6N25 250V N-Channel MOSFET • 4.4A, 250V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical 5 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability February 2007 UniFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D-PAK FDD Series I-PAK FDU Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FDD6N25 / FDU6N25 250 18 ±30 45 5 50 -55 to +150 Unit V A V mJ A mJ V/ns W/°C °C Package Marking and Ordering Information Device Marking FDD6N25 FDU6N25 Device FDD6N25TM FDD6N25TF FDU6N25TU Package D-PAK D-PAK I-PAK Reel Size 380mm Tape Width 16mm Quantity 2500 2000 Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250µA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 2.2A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 2.2A Note 4 -- |
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