FJNS4207RBU
FJNS4207RBU Datasheet
FJNS4207R
| Part | Datasheet |
|---|---|
FJNS4207RBU |
FJNS4207RBU (pdf) |
| Related Parts | Information |
|---|---|
FJNS4207RTA |
FJNS4207RTA |
| PDF Datasheet Preview |
|---|
| FJNS4207R FJNS4207R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJNS3207R TO-92S 1.Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -100 -55 ~ 150 Equivalent Circuit Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCB= -10V, IE=0 f=1MHz fT VI off VI on R1/R2 Current Gain-Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Ratio VCE= -10V, IC= -5mA VCE= -5V, IC= -100µA VCE= -0.3V, IC= -2mA Min. -50 -50 68 Typ. 200 22 Max. Units V µA V pF MHz V 2002 Fairchild Semiconductor Corporation FJNS4207R Typical Characteristics hFE, DC CURRENT GAIN 1000 100 VCE = - 5V R1 = 22K R2 = 47K -100 IC[mA], COLLECTOR CURRENT Figure DC current Gain -10k |
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