FDC796N
FDC796N Datasheet
FDC796N
| Part | Datasheet |
|---|---|
FDC796N |
FDC796N (pdf) |
| Related Parts | Information |
|---|---|
FDC796N_F077 |
FDC796N_F077 |
| PDF Datasheet Preview |
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| FDC796N February 2004 FDC796N 30V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed. • DC/DC converter • Power management • Load switch • A, 30 V. RDS ON = 9 VGS = 10 V RDS ON = 12 VGS = V • High performance trench technology for extremely low RDS ON • Low gate charge • High power and current handling capability • Fast switching speed. S SuperSOT-6TM FLMP Bottom Drain Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation Note 1a Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDC796N 7’’ Ratings 30 ± 20 40 2 −55 to +150 60 111 Tape width 8mm Units V A W °C °C/W Quantity 3000 units Fairchild Semiconductor Corporation FDC796N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Leakage VGS = ± 20 V, VDS = 0 V ±100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS on Static On Resistance Forward Transconductance |
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