FDC796N_F077

FDC796N_F077 Datasheet


FDC796N

Part Datasheet
FDC796N_F077 FDC796N_F077 FDC796N_F077 (pdf)
Related Parts Information
FDC796N FDC796N FDC796N
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FDC796N

February 2004

FDC796N
30V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
• DC/DC converter
• Power management
• Load switch
• A, 30 V.

RDS ON = 9 VGS = 10 V RDS ON = 12 VGS = V
• High performance trench technology for extremely low RDS ON
• Low gate charge
• High power and current handling capability
• Fast switching speed.

S SuperSOT-6TM FLMP

Bottom Drain

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Maximum Power Dissipation

Note 1a Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDC796N
7’’

Ratings
30 ± 20 40
2 −55 to +150
60 111

Tape width 8mm

Units

V A W °C °C/W

Quantity 3000 units

Fairchild Semiconductor Corporation

FDC796N

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C
mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V

IGSS

Leakage

VGS = ± 20 V, VDS = 0 V
±100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient

RDS on

Static On Resistance

Forward Transconductance
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Datasheet ID: FDC796N_F077 514084