FDP4020P

FDP4020P Datasheet

FDP4020P

Part	Datasheet
FDP4020P	FDP4020P (pdf)

Related Parts	Information
FDB4020P	FDB4020P

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FDP4020P September 2000 FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-DC converters requiring P-Channel. • -16 A, -20 V. RDS on = VGS = V RDS on = VGS = V. • Critical DC electrical parameters specified at elevated temperature. • High density cell design for extremely low RDS on . • TO-220 and TO-263 D2PAK package for both through hole and surface mount applications. • 175°C maximum junction temperature rating. A bsolute M axim um R atings TA = 25°C unless otherwise noted Param eter FDP4020P FDB4020P VDSS Drain-Source Voltage VGSS Gate-Source Voltage Drain Current - Continuous - Pulsed Total Power Dissipation TC = 25°C TJ, TSTG Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient Note 1 -20 ±8 -16 -48 -65 to +175 Units W /°C °C/W °C/W Package Outlines and Ordering Information Device Marking Device Reel Size FDP4020P FDP4020P 13’’ Tape Width 12mm Q u a n tity 2500 units Fairchild Semiconductor International FDP4020P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown VGS = 0 V, ID = -250 µA Voltage IDSS Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V IGSSR VGS = -8 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID on On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C

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FDP4020P

September 2000

FDP4020P/FDB4020P

P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-DC converters requiring P-Channel.
• -16 A, -20 V. RDS on = VGS = V RDS on = VGS = V.
• Critical DC electrical parameters specified at elevated temperature.
• High density cell design for extremely low RDS on .
• TO-220 and TO-263 D2PAK package for both
through hole and surface mount applications.
• 175°C maximum junction temperature rating.

A bsolute M axim um R atings TA = 25°C unless otherwise noted

Param eter

FDP4020P FDB4020P

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

Drain Current - Continuous
- Pulsed

Total Power Dissipation TC = 25°C

TJ, TSTG

Derate above 25°C Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient

Note 1
-20 ±8 -16 -48 -65 to +175

Units

W /°C
°C/W °C/W
Package Outlines and Ordering Information

Device Marking

Device

Reel Size

FDP4020P

FDP4020P
13’’

Tape Width 12mm

Q u a n tity 2500 units

Fairchild Semiconductor International

FDP4020P

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain-Source Breakdown

VGS = 0 V, ID = -250 µA

Voltage

IDSS

Breakdown Voltage Temperature Coefficient

ID = -250 µA, Referenced to 25°C

Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V

IGSSF

Gate-Body Leakage Current, Forward

VGS = 8 V, VDS = 0 V

IGSSR

VGS = -8 V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source On-Resistance

ID on

On-State Drain Current

Forward Transconductance

VDS = VGS, ID = -250 µA

ID = -250 µA, Referenced to 25°C

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Datasheet ID: FDP4020P 514047