BD242C
BD242C Datasheet
BD242/A/B/C
| Part | Datasheet |
|---|---|
BD242C |
BD242C (pdf) |
| Related Parts | Information |
|---|---|
|
BD242ATU |
BD242ATU |
|
BD242TU |
BD242TU |
|
BD242CTU |
BD242CTU |
| PDF Datasheet Preview |
|---|
| BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively TO-220 PNP Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage BD242 BD242A BD242B BD242C VCER Collector-Emitter Voltage BD242 BD242A BD242B BD242C VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current DC *Collector Current Pulse Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition VCEO sus * Collector-Emitter Sustaining Voltage BD242 BD242A BD242B BD242C IC = - 30mA, IB = 0 ICEO ICES IEBO hFE Collector Cut-off Current BD242/A BD242B/C Collector Cut-off Current BD242 BD242A BD242B BD242C Emitter Cut-off Current * DC Current Gain VCE sat * Collector-Emitter Saturation Voltage VBE on * Base-Emitter ON Voltage * Pulse Test PW=300µs, duty Pulsed VCE = - 30V, IB = 0 VCE = - 60V, IB = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = - 100V, VBE = 0 VEB = - 5V, IC = 0 VCE = - 4V, IC = - 1A VCE = - 4V, IC = - 3A IC = - 3A, IB = - 0.6A VCE = - 4V, IC = - 3A Value - 45 - 60 - 80 - 100 - 55 - 70 - 90 - 115 -5 -3 -5 -1 40 150 - 65 ~ 150 |
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