BC858C
BC858C Datasheet
BC856/857/858/859/860
| Part | Datasheet |
|---|---|
BC858C |
BC858C (pdf) |
| PDF Datasheet Preview |
|---|
| BC856/857/858/859/860 BC856/857/858/859/860 Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise BC859, BC860 • Complement to BC846 BC850 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO Collector-Base Voltage BC856 BC857/860 BC858/859 VCEO Collector-Emitter Voltage BC856 BC857/860 BC858/859 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current DC Collector Power Dissipation Junction Temperature Storage Temperature 2 1 SOT-23 Base Emitter Collector Value -80 -50 -30 -65 -45 -30 -5 -100 310 150 -65 ~ 150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition ICBO hFE VCE sat VBE sat VBE on Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCB= -30V, IE=0 VCE= -5V, IC= -2mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA VCE= -5V, IC= -10mA f=100MHz Output Capacitance VCB= -10V, IE=0, f=1MHz Noise Figure BC856/857/858 VCE= -5V, IC= -200µA BC859/860 |
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