LAT0127B3CB

LAT0127B3CB Datasheet

~ 110 LATO127B3CB w/TIP-29C TO-220 TRANSISTOR

Part	Datasheet
LAT0127B3CB	LAT0127B3CB (pdf)

PDF Datasheet Preview
HEAT DISSIPATORS FOR PLASTIC CASE, CASE-MOUNTED SEMICONDUCTORS LA-B3 Series Ct., [:;3 L: cr.2 1::::I'lC ~ -~I t:J 129 32:77 Ci--c1~.53 ---1 09 229 Dimensions are for reference use only. Contact IERC for with tolerances or standard part drawings, LA-B4 Series <r.1 cr.2" ~ 110 LATO127B3CB w/TIP-29C TO-220 TRANSISTOR ~100 1 ' ;~'A DESCRIPTION OF CURVES Z 90 UJ ai 801 ~ < 70 UJ ~ 60 aJ < 50 UJ !Q 40 ~ I A. N.C. Horiz. Device Only Mounted to G-10. B. N.C. Horiz. & Vert. With Dissipator. C. 200 FPM w/Diss. D. 500 FPM w/Diss. E. 1000 FPM w/Diss. ~ 20 1UJ <n < u .Thermal .Derate .Derate --1I 2 3 4 5 6 7 8 910111213 1415 POWER DISSIPATED WATTS Resistance Case to Sink is °C/W/Joint Compound. °C/watt for unplated part in natural convection only. °C/watt for part in natural convection only. Ordering Informatio-n IERC PART NO. IJnplated Comm'l. Black Anodize Mil. Black Anodize LAOOOB3U LATO126B3U LATO127B3U LA394B3U LAOOOB3CB LATO126B3CB LATO127B3CB LA394B3CB Note See page iv for other finishes. LAOOOB3B LATO126B3B LATO127B3B LA394B3B LAOOOB3 LATO126B3 LATO127B3 LA394B3 Semiconductor Accommodated Undrllled TO-126 TO-127, TO-220 Universal Hole patt. ref. no. see pg. 2-27 Max Weight Grams ~ 110 u ~ 100 1Z 90 w iD 80 ~ < 70 w LATO127B4CB A w/TIP-29C TO-220 TRANSISTOR DESCRIPTION OF CURVES A. N.C. Horiz. Device Only Mounted to G.10. B. N.C. Horiz. & Vert. With Dissipator. C. 200 FPM w/Diss. ~ 60 a < 50 w !!1 40 0: D. 500 FPM w/Diss. E. 1000 FPM w/Diss. ~ ~, w. 1- ~ 10~ I~I ~ 0 1 2 3 4 5 6 7 8 910111213 1415 POWER DISSIPATED WATTS .Thermal Resistance Case to Sink is "C/W/Joint Compound. .Derate "C/watt for unplated part in natural convection only. .Derate °C/watt for part in natural convection only.

PDF Datasheet Preview

HEAT DISSIPATORS FOR PLASTIC CASE, CASE-MOUNTED SEMICONDUCTORS

LA-B3 Series

Ct.,
[:;3

L: cr.2 1::::I'lC ~ -~I t:J
129 32:77

Ci--c1~.53
---1
09 229

Dimensions
are for reference use only. Contact IERC for with tolerances or standard part drawings,

LA-B4 Series
<r.1 cr.2"
~ 110 LATO127B3CB w/TIP-29C TO-220 TRANSISTOR
~100 1 ' ;~'A

DESCRIPTION OF CURVES

Z 90 UJ
ai 801 ~ < 70 UJ
~ 60 aJ < 50 UJ !Q 40 ~

I A. N.C. Horiz. Device Only Mounted to G-10.

B. N.C. Horiz. & Vert. With Dissipator.

C. 200 FPM w/Diss.

D. 500 FPM w/Diss. E. 1000 FPM w/Diss.
~ 20 1UJ <n < u
.Thermal .Derate .Derate
--1I 2 3 4 5 6 7 8 910111213
1415

POWER DISSIPATED WATTS

Resistance Case to Sink is °C/W/Joint Compound. °C/watt for unplated part in natural convection only. °C/watt for part in natural convection only.
Ordering

Informatio-n IERC PART NO.

IJnplated

Comm'l. Black Anodize

Mil. Black Anodize

LAOOOB3U

LATO126B3U LATO127B3U LA394B3U

LAOOOB3CB

LATO126B3CB LATO127B3CB LA394B3CB

Note See page iv for other finishes.

LAOOOB3B

LATO126B3B LATO127B3B LA394B3B

LAOOOB3 LATO126B3 LATO127B3 LA394B3

Semiconductor Accommodated

Undrllled TO-126 TO-127, TO-220 Universal

Hole patt. ref. no. see pg. 2-27

Max Weight Grams
~ 110 u ~ 100
1Z 90 w
iD 80 ~ < 70 w

LATO127B4CB A
w/TIP-29C

TO-220 TRANSISTOR

DESCRIPTION OF CURVES

A. N.C. Horiz. Device Only Mounted to G.10.

B. N.C. Horiz. & Vert. With Dissipator.

C. 200 FPM w/Diss.
~ 60 a < 50 w
!!1 40 0:

D. 500 FPM w/Diss. E. 1000 FPM w/Diss.
~ ~, w. 1-
~ 10~

I~I ~
0 1 2 3 4 5 6 7 8 910111213
1415

POWER DISSIPATED WATTS
.Thermal Resistance Case to Sink is "C/W/Joint Compound. .Derate "C/watt for unplated part in natural convection only. .Derate °C/watt for part in natural convection only.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived LAT0127B3CB Datasheet file may be downloaded here without warranties.

Datasheet ID: LAT0127B3CB 507290