2N5770_D27Z

2N5770_D27Z Datasheet

2N5770

Part	Datasheet
2N5770_D27Z	2N5770_D27Z (pdf)

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2N5770 2N5770 Discrete POWER & Signal Technologies TO-92 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the mA to 30 mA range. Sourced from Process See PN918 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 50 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5770 350 125 Units V mA °C Units mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation 2N5770 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions NPN RF Transistor continued Min Max Units OFF CHARACTERISTICS

PDF Datasheet Preview

2N5770
2N5770

Discrete POWER & Signal Technologies

TO-92

NPN RF Transistor

This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the mA to 30 mA range. Sourced from Process See PN918 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC TJ, Tstg

Collector Current - Continuous Operating and Storage Junction Temperature Range
50 -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient
2N5770 350 125

Units

V mA °C

Units
mW/°C °C/W °C/W
1997 Fairchild Semiconductor Corporation
2N5770

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

NPN RF Transistor
continued

Min Max Units

OFF CHARACTERISTICS

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Datasheet ID: 2N5770_D27Z 513003