Document Number MRF9060N Rev. 10, 5/2006
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MRF9060NR1 (pdf) |
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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power 60 Watts PEP Power Gain dB Efficiency 40% Two Tones IMD - dBc • Capable of Handling 5:1 VSWR, 26 Vdc, 945 MHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • 200_C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. • TO - 272 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF9060NR1 MRF9060NBR1 945 MHz, 60 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC MRF9060NR1 CASE 1337 - 03, STYLE 1 TO - 272- 2 PLASTIC MRF9060NBR1 Table Maximum Ratings Rating Value Drain- Source Voltage Gate- Source Voltage Total Device Dissipation TC = 25°C Derate above 25°C VDSS VGS PD - +65 - + 15 Storage Temperature Range Operating Junction Temperature Tstg - 65 to +150 Table Thermal Characteristics Characteristic Value 1 Thermal Resistance, Junction to Case MTTF calculator available at Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. Unit Vdc W/°C °C °C Unit °C/W Freescale Semiconductor, Inc., All rights reserved. RF Device Data Freescale Semiconductor MRF9060NR1 MRF9060NBR1 1 Table ESD Protection Characteristics Test Conditions |
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