MRF9060NR1

MRF9060NR1 Datasheet


Document Number MRF9060N Rev. 10, 5/2006

Part Datasheet
MRF9060NR1 MRF9060NR1 MRF9060NR1 (pdf)
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Freescale Semiconductor Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts Output Power 60 Watts PEP Power Gain dB Efficiency 40% Two Tones IMD - dBc
• Capable of Handling 5:1 VSWR, 26 Vdc, 945 MHz, 60 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
• TO - 272 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.

MRF9060NR1 MRF9060NBR1
945 MHz, 60 W, 26 V LATERAL N - CHANNEL

BROADBAND RF POWER MOSFETs

CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC

MRF9060NR1

CASE 1337 - 03, STYLE 1 TO - 272- 2 PLASTIC

MRF9060NBR1

Table Maximum Ratings

Rating

Value

Drain- Source Voltage

Gate- Source Voltage

Total Device Dissipation TC = 25°C Derate above 25°C

VDSS VGS PD
- +65
- + 15

Storage Temperature Range Operating Junction Temperature

Tstg
- 65 to +150

Table Thermal Characteristics

Characteristic

Value 1

Thermal Resistance, Junction to Case

MTTF calculator available at Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.

Unit Vdc W/°C °C °C

Unit °C/W

Freescale Semiconductor, Inc., All rights reserved.

RF Device Data Freescale Semiconductor

MRF9060NR1 MRF9060NBR1 1

Table ESD Protection Characteristics

Test Conditions
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Datasheet ID: MRF9060NR1 635613