MSASC25W100K
MSASC25W100K Datasheet
MSASC25W100K
| Part | Datasheet |
|---|---|
MSASC25W100K |
MSASC25W100K (pdf) |
| PDF Datasheet Preview |
|---|
| 8700 E. Thomas Road Scottsdale, AZ 85252 PH 480 941-6300 FAX 480 941-1503 MSASC25W100K • Platinum schottky barrier MSASC25W100KR • Oxide passivated structure 100 Volts • Hermetically sealed, low profile ceramic surface mount power package • Low package inductance 25 Amps • Very low thermal resistance • TXV-level screening MSASC25W100KV or S-level MSASC25W100KS Low Profile Surface Mount screening i.a.w. Microsemi internal procedure PS11.50 available SCHOTTKY DIODE Maximum Ratings 25°C unless otherwise specified MAX. UNIT DC Blocking Voltage Average Rectified Forward Current, 145°C derating, forward current, 145°C Nonrepetitive Peak Surge Current, tp= ms, half-sinewave Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: MSASC25W100K MSASC25W100KR VRRM VRWM VR IF ave dIF/dT IFSM IRRM Tj Tstg 100 25 280 2 -65 to +175 -65 to +175 Volts Amps Amps/°C Amps Amp °C °C °C/W Datasheet# MSC1034F Mechanical Outline ThinKey 2 MSASC25W100K MSASC25W100KR Electrical Parameters CONDITIONS IR25 VR= 100 Vdc, Tc= 25°C |
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