RMPA0959

RMPA0959 Datasheet

RMPA0959

Part	Datasheet
RMPA0959	RMPA0959 (pdf)

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RMPA0959 October 2004 RMPA0959 CDMA and CDMA2000-1X PowerEdge Power Amplifier Module The RMPA0959 power amplifier module PAM is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our Heterojunction Bipolar Transistor HBT process. • Single positive-supply operation with low power and shutdown modes • 39% CDMA efficiency at +28dBm average output power • 53% AMPS mode efficiency at +31dBm output power • Compact LCC package X mm • Internally matched to and DC blocked RF input/ output • Meets CDMA2000-1XRTT performance requirements Device Functional Block Diagram PA MODULE Vcc1 5 COLLECTOR BIAS 1 GND 3, 7, 9,10,11 RF IN 4 Vref 1 INPUT MATCHING NETWORK INTERSTAGE MATCH INPUT STAGE MMIC OUTPUT STAGE INPUT STAGE BIAS OUTPUT STAGE BIAS OUTPUT MATCHING NETWORK RF OUT 8 VCC=3.4V nom VREF=2.85V nom 824-849 MHz I/O BIAS CONTROL COLLECTOR BIAS 2 Vcc2 6 Vmode 2 2004 Fairchild Semiconductor Corporation RMPA0959 Absolute Ratings1 Symbol Vcc1, Vcc2 Vref Vmode Pin Tstg Parameter Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature Ratings to +10 -55 to +150 Units V dBm °C Notes 1 No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.

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RMPA0959

October 2004

RMPA0959

CDMA and CDMA2000-1X PowerEdge Power Amplifier Module

The RMPA0959 power amplifier module PAM is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our Heterojunction Bipolar Transistor HBT process.
• Single positive-supply operation with low power and shutdown modes
• 39% CDMA efficiency at +28dBm average output power
• 53% AMPS mode efficiency at +31dBm output power
• Compact LCC package X mm
• Internally matched to and DC blocked RF input/
output
• Meets CDMA2000-1XRTT performance requirements

Device

Functional Block Diagram

PA MODULE

Vcc1 5

COLLECTOR BIAS 1

GND 3, 7, 9,10,11

RF IN 4

Vref 1

INPUT MATCHING NETWORK

INTERSTAGE MATCH

INPUT

STAGE MMIC

OUTPUT STAGE

INPUT STAGE BIAS

OUTPUT STAGE BIAS

OUTPUT MATCHING NETWORK

RF OUT 8

VCC=3.4V nom VREF=2.85V nom 824-849 MHz I/O

BIAS CONTROL

COLLECTOR BIAS 2

Vcc2 6

Vmode 2
2004 Fairchild Semiconductor Corporation

RMPA0959

Absolute Ratings1

Symbol Vcc1, Vcc2 Vref Vmode Pin Tstg

Parameter Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature

Ratings
to +10
-55 to +150

Units V
dBm °C

Notes 1 No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.

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Datasheet ID: RMPA0959 634678