MRF9030LR1

MRF9030LR1 Datasheet

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Part	Datasheet
MRF9030LR1	MRF9030LR1 (pdf)

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Freescale Semiconductor, Inc... MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9030/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to GHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power 30 Watts PEP Power Gain 19 dB Efficiency IMD - dBc • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, 26 Vdc, 945 MHz, 30 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. • Low Gold Plating Thickness on Leads. L Suffix Indicates Nominal. MRF9030LR1 MRF9030LSR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 360B - 05, STYLE 1 NI - 360 MRF9030LR1 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model MRF9030LR1 MRF9030LSR1 MRF9030LR1 MRF9030LSR1 CASE 360C - 05, STYLE 1 NI - 360S MRF9030LSR1 Symbol VDSS VGS PD Tstg TJ Value 68 - + 15 92 117 - 65 to +150 200 Class 1 Minimum M1 Minimum Unit Vdc Watts W/°C °C °C Unit °C/W

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Freescale Semiconductor, Inc...

MOTOROLA

Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF9030/D

The RF Sub - Micron MOSFET Line

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to GHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
• Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power 30 Watts PEP Power Gain 19 dB Efficiency IMD - dBc
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, 26 Vdc, 945 MHz, 30 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates Nominal.

MRF9030LR1 MRF9030LSR1
945 MHz, 30 W, 26 V LATERAL N - CHANNEL

BROADBAND RF POWER MOSFETs

CASE 360B - 05, STYLE 1 NI - 360

MRF9030LR1

MAXIMUM RATINGS Rating

Drain - Source Voltage Gate - Source Voltage Total Device Dissipation TC = 25°C

Derate above 25°C

Storage Temperature Range Operating Junction Temperature THERMAL CHARACTERISTICS

Characteristic Thermal Resistance, Junction to Case

ESD PROTECTION CHARACTERISTICS Test Conditions

Human Body Model Machine Model

MRF9030LR1 MRF9030LSR1

MRF9030LR1 MRF9030LSR1

CASE 360C - 05, STYLE 1 NI - 360S

MRF9030LSR1

Symbol VDSS VGS PD

Tstg TJ

Value 68
- + 15 92 117
- 65 to +150 200

Class 1 Minimum M1 Minimum

Unit Vdc Watts W/°C
°C °C

Unit °C/W

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Datasheet ID: MRF9030LR1 635611