SIDC08D60C6Y
SIDC08D60C6Y Datasheet
SIDC08D60C6
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SIDC08D60C6Y |
SIDC08D60C6Y (pdf) |
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SIDC08D60C6 |
SIDC08D60C6 |
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| SIDC08D60C6 Fast switching diode chip in EMCON 3 -Technology FEATURES: This chip is used for • power module • discrete components • small temperature coefficient Applications: • drives Chip Type SIDC08D60C6 600V 30A Die Size x mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallization Cathode metallization Die bond Wire bond Reject ink dot size Recommended storage environment 1818 pcs Photoimide 3200 nm AlSiCu Ni Ag suitable for epoxy and soft solder die bonding electrically conductive glue or solder 0.65mm max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AIM PMD D CID CLS, L4551M, Edition SIDC08D60C6 Maximum Ratings Parameter VRRM Continuous forward current limited by IF Tjmax Maximum repetitive forward current limited by Tjmax IFRM Operating junction and storage temperature Tj , Tstg 1 depending on thermal properties of assembly Condition Value 600 Unit V Static Electrical Characteristics tested on chip , Tj=25 °C, unless otherwise specified Parameter Conditions Value min. Typ. |
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