Document Number MRF18085B Rev. 6, 5/2006
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MRF18085BLR3 (pdf) |
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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band 1930 - 1990 MHz Power Gain - dB Typ 85 Watts CW Efficiency - 50% Typ 85 Watts CW • Capable of Handling 5:1 VSWR, 26 Vdc, 1960 MHz, 85 Watts CW Output Power • Internally Matched for Ease of Use • High Gain, High Efficiency, and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF18085BLR3 MRF18085BLSR3 1930 - 1990 MHz, 85 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF18085BLR3 ARCHIVE INFORMATION ARCHIVE INFORMATION CASE 465A - 06, STYLE 1 NI - 780S MRF18085BLSR3 Table Maximum Ratings Rating Value Drain - Source Voltage Gate - Source Voltage Total Device Dissipation TC = 25°C Derate above 25°C VDSS VGS PD - +65 - +15 Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table Thermal Characteristics Characteristic Tstg TC TJ - 65 to +150 200 Value 1 Thermal Resistance, Junction to Case Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes - AN1955. Unit Vdc W/°C °C °C °C Unit °C/W Freescale Semiconductor, Inc., 2006, All rights reserved. RF Device Data Freescale Semiconductor MRF18085BLR3 MRF18085BLSR3 1 ARCHIVE INFORMATION ARCHIVE INFORMATION Table ESD Protection Characteristics Test Conditions Human Body Model |
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