KSC1173YTU

KSC1173YTU Datasheet

KSC1173 NPN Epitaxial Silicon Transistor

Part	Datasheet
KSC1173YTU	KSC1173YTU (pdf)

Related Parts	Information
KSC1173YTSTU	KSC1173YTSTU
KSC1173OTU	KSC1173OTU

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KSC1173 NPN Epitaxial Silicon Transistor KSC1173 NPN Epitaxial Silicon Transistor • Low Frequency Power Amplifier, Power Regulator • Collector Current IC=3A • Collector Dissipation PC=10W TC=25°C • Complement to KSA473 August 2009 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TA = 25°C unless otherwise noted Parameter Value Units BVCBO Collector-Base Voltage BVCEO Collector-Emitter Voltage BVEBO Emitter-Base Voltage Collector Current Collector Dissipation TC=25°C Junction Temperature TSTG Storage Temperature -55 to +150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2009 Fairchild Semiconductor Corporation KSC1173 NPN Epitaxial Silicon Transistor Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE sat VBE on fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Base Width Product Output Capacitance IC = 500uA, IE = 0 IC = 10mA IB = 0 IE = -1mA, IC = 0 VCB = 20V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 2.5A IC = 2A, IB = 0.2A VCE = 2V, IC = 0.5A VCE = 2V, IC = 0.5A VCB = 10V, IE =0, f = 1MHz hFE Classification Classification hFE1 O 70 ~ 140 Min. 30 5 70 25 Typ. 100 35

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KSC1173 NPN Epitaxial Silicon Transistor

KSC1173 NPN Epitaxial Silicon Transistor
• Low Frequency Power Amplifier, Power Regulator
• Collector Current IC=3A
• Collector Dissipation PC=10W TC=25°C
• Complement to KSA473

August 2009

TO-220
1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings * TA = 25°C unless otherwise noted

Parameter

Value

Units

BVCBO

Collector-Base Voltage

BVCEO

Collector-Emitter Voltage

BVEBO

Emitter-Base Voltage

Collector Current

Collector Dissipation TC=25°C

Junction Temperature

TSTG

Storage Temperature
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2009 Fairchild Semiconductor Corporation

KSC1173 NPN Epitaxial Silicon Transistor

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO

ICBO IEBO hFE1 hFE2 VCE sat VBE on
fT Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Base Width Product Output Capacitance

IC = 500uA, IE = 0 IC = 10mA IB = 0 IE = -1mA, IC = 0 VCB = 20V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 2.5A IC = 2A, IB = 0.2A VCE = 2V, IC = 0.5A VCE = 2V, IC = 0.5A VCB = 10V, IE =0, f = 1MHz
hFE Classification

Classification hFE1

O 70 ~ 140

Min. 30 5
70 25

Typ.
100 35

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Datasheet ID: KSC1173YTU 634178