VRF191
Part | Datasheet |
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VRF191 (pdf) |
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VRF191 100V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF191 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. • Improved Ruggedness V BR DSS = 270V min • 150W with 22dB Typical Gain 30MHz, 100V • 150W with 14dB Typical Gain 150MHz, 100V • Excellent Stability & Low IMD • Common Source • RoHS Compliant • 5:1 Load VSWR Capability at Operating Conditions • Nitride Passivated • Refractory Gold Metallization • High Performance Flangeless Package Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current TC = 25°C Gate-Source Voltage Total Device dissipation TC = 25°C Storage Temperature Range Operating Junction Temperature All Ratings TC =25°C unless otherwise VRF191 Unit ±40 -65 to 200 °C Static Electrical Characteristics Symbol V BR DSS VDS ON IDSS IGSS gfs VGS TH Parameter Drain-Source Breakdown Voltage VGS = 0V, ID = 100mA On State Drain Voltage ID ON = 5A, VGS = 10V Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V Gate-Source Leakage Current VDS = ±20V, VDS = 0V Forward Transconductance VDS = 10V, ID = 5A Gate Threshold Voltage VDS = 10V, ID = 100mA Unit mhos Thermal Characteristics Characteristic Junction to Case Thermal Resistance Junction to Sink Use high thermal joint compound and planar heat sink surface. CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Unit °C/W Microsemi Website - Dynamic Characteristics Parameter Test Conditions CISS Input Capacitance Coss Output Capacitance Crss VGS = 0V VDS = 100V f = 1MHz Functional Characteristics Parameter f1 = 30MHz, VDD = 100V, IDQ = 250mA, Pout = 150W f1 = 150MHz, VDD = 100V, IDQ = 250mA, Pout = 150W f 1= 30MHz, VDD = 100V, IDQ = 250mA, Pout = 150W f1 = 30MHz, VDD = 100V, IDQ = 250mA, Pout = 150W |
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