IPP80N06S405AKSA2
IPP80N06S405AKSA2 Datasheet
IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05
| Part | Datasheet |
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IPP80N06S405AKSA2 |
IPP80N06S405AKSA2 (pdf) |
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| Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product RoHS compliant • 100% Avalanche tested IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 Product Summary V DS R DS on ,max SMD version ID 60 V 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S4-05 IPI80N06S4-05 IPP80N06S4-05 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0605 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Conditions Continuous drain current T C=25°C, V GS=10V1 T C=100°C, V GS=10V2 Pulsed drain current2 I D,pulse T C=25°C Avalanche energy, single pulse2 I D=40A Avalanche current, single pulse Gate source voltage Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category DIN IEC 68-1 Value 80 320 152 80 ±20 107 -55 +175 55/175/56 Unit A mJ A V W °C 2009-03-24 IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 Parameter Conditions min. Values typ. Unit max. Thermal characteristics2 Thermal resistance, junction - case R thJC - Thermal resistance, junction ambient, leaded R thJA |
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