ARF473

ARF473 Datasheet

ARF473

Part	Datasheet
ARF473	ARF473 (pdf)

PDF Datasheet Preview
Common Source Push-Pull Pair ARF473 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE ARF473 Flange 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz. • Specified 135 Volt, 130 MHz Characteristics: • High Performance Push-Pull RF Package. Output Power = 300 Watts. • High Voltage Breakdown and Large SOA Gain = 13dB Class AB Efficiency = 50% for Superior Ruggedness. • Low Thermal Resistance. MAXIMUM RATINGS All Ratings TC = 25°C unless otherwise specified. Symbol Parameter ARF473 UNIT VDSS ID VGS PD TJ,TSTG TL Drain-Source Voltage Continuous Drain Current TC = 25°C Gate-Source Voltage each device Total Device Dissipation TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. 500 10 ±30 500 -55 to 200 300 Volts Amps Volts Watts STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions BVDSS VDS ON IDSS IGSS gfs gfs1/ gfs2 VGS TH Drain-Source Breakdown Voltage VGS = 0V, ID = 250 µA On State Drain Voltage 1 ID ON = 5A, VGS = 10V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = 50V, VGS = 0, TC = 125°C Gate-Source Leakage Current VGS = ±30V, VDS = 0V Forward Transconductance VDS = 25V, ID = 5A Forward Transconductance Match Ratio VDS = 25V, ID = 5A Gate Threshold Voltage VDS = VGS, ID = 200mA Gate Threshold Voltage Match VDS = VGS, ID = 200mA MIN TYP MAX UNIT 500 Volts 25 µA

PDF Datasheet Preview

Common Source Push-Pull Pair

ARF473

RF POWER MOSFET

N - CHANNEL ENHANCEMENT MODE

ARF473

Flange
165 V 300 W 150 MHz

The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
• Specified 135 Volt, 130 MHz Characteristics:
• High Performance Push-Pull RF Package.

Output Power = 300 Watts.
• High Voltage Breakdown and Large SOA

Gain = 13dB Class AB

Efficiency = 50%
for Superior Ruggedness.
• Low Thermal Resistance.

MAXIMUM RATINGS

All Ratings TC = 25°C unless otherwise specified.

Symbol Parameter

ARF473

UNIT

VDSS ID

VGS PD TJ,TSTG TL

Drain-Source Voltage

Continuous Drain Current TC = 25°C Gate-Source Voltage
each device

Total Device Dissipation TC = 25°C Operating and Storage Junction Temperature Range

Lead Temperature from Case for 10 Sec.
500 10 ±30 500 -55 to 200 300

Volts Amps Volts Watts

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

BVDSS VDS ON

IDSS

IGSS gfs
gfs1/ gfs2

VGS TH

Drain-Source Breakdown Voltage VGS = 0V, ID = 250 µA On State Drain Voltage 1 ID ON = 5A, VGS = 10V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = 50V, VGS = 0, TC = 125°C Gate-Source Leakage Current VGS = ±30V, VDS = 0V Forward Transconductance VDS = 25V, ID = 5A Forward Transconductance Match Ratio VDS = 25V, ID = 5A Gate Threshold Voltage VDS = VGS, ID = 200mA Gate Threshold Voltage Match VDS = VGS, ID = 200mA

MIN TYP MAX UNIT
500 Volts
25 µA

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived ARF473 Datasheet file may be downloaded here without warranties.

Datasheet ID: ARF473 648922