IXTA56N15T
IXTA56N15T Datasheet
IXTA56N15T IXTP56N15T
| Part | Datasheet |
|---|---|
IXTA56N15T |
IXTA56N15T (pdf) |
| Related Parts | Information |
|---|---|
IXTP56N15T |
IXTP56N15T |
| PDF Datasheet Preview |
|---|
| Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA56N15T IXTP56N15T V= DSS RDS on 150 56 36 V A mΩ VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt PD TJ T Tstg SOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C RGS = 1 MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I, DM di/dt A/us, V DSS 175°C, TC = 25°C mm in. from case for 10 s Plastic body for 10 seconds Mounting torque TO-220 TO-220 TO-263 Maximum Ratings TO-263 IXTA ± 30 56 140 5 500 A TO-220 IXTP V/ns -55 +175 -55 +175 G = Gate S = Source D = Drain TAB = Drain / 10 Nm/lb.in. |
| More datasheets: IS42S83200B-7TI | IS42S83200B-6TL-TR | IS42S16160B-6BLI-TR | IS42S16160B-6TLI | IS42S83200B-6TLI | IS42S83200B-6TLI-TR | IS42S16160B-6TLI-TR | IS42S16160B-6BLI | CN213S | MDM-9SH027L |
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