ARF449AG
ARF449AG Datasheet
ARF449A G
| Part | Datasheet |
|---|---|
ARF449AG |
ARF449AG (pdf) |
| Related Parts | Information |
|---|---|
ARF449BG |
ARF449BG |
| PDF Datasheet Preview |
|---|
| RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE ARF449A G ARF449B G TO-247 *G Denotes RoHS Compliant, Pb Free Terminal Finish. Common Source 150V 90W 120MHz The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for push- pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz. • Specified 150 Volt, MHz Characteristics • Low Cost Common Source RF Package. Output Power = 90 Watts. • Very High Breakdown for Improved Ruggedness. Gain = 13dB Class C • Low Thermal Resistance. Efficiency = 75% • Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol Parameter VDSS VDGO ID VGS PD TJ,TSTG TL Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current TC = 25°C Gate-Source Voltage Total Power Dissipation TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. All Ratings TC = 25°C unless otherwise specified. ARF449A/449B G UNIT 450 Volts Amps ±30 Volts Watts °C/W -55 to 150 °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250 µA VDS ON State Drain Voltage 1 ID ON = 5A, VGS = 10V IDSS Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V Forward Transconductance VDS = 25V, ID = 5A |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived ARF449AG Datasheet file may be downloaded here without warranties.