MRF9030LSR1

MRF9030LSR1 Datasheet

Document Number MRF9030 Rev. 7, 9/2008

Part	Datasheet
MRF9030LSR1	MRF9030LSR1 (pdf)

Related Parts	Information
MRF9030LSR5	MRF9030LSR5

PDF Datasheet Preview
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power 30 Watts PEP Power Gain 19 dB Efficiency IMD - dBc • Capable of Handling 10:1 VSWR, 26 Vdc, 945 MHz, 30 Watts CW Output Power • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates Nominal. • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. MRF9030LSR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 360C - 05, STYLE 1 NI - 360S Table Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table ESD Protection Characteristics Test Conditions Human Body Model Machine Model Symbol VDSS VGS PD Tstg TC TJ Value - +68 - + 15 117 - 65 to +150 200 Value Class 1 Minimum M1 Minimum Unit Vdc W/°C °C °C °C Unit °C/W Freescale Semiconductor, Inc., All rights reserved. RF Device Data Freescale Semiconductor MRF9030LSR1 1 Table Electrical Characteristics TC = 25°C unless otherwise noted Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current VDS = 68 Vdc, VGS = 0 Vdc IDSS Zero Gate Voltage Drain Leakage Current VDS = 26 Vdc, VGS = 0 Vdc IDSS Gate - Source Leakage Current VGS = 5 Vdc, VDS = 0 Vdc IGSS On Characteristics

PDF Datasheet Preview

ARCHIVE INFORMATION ARCHIVE INFORMATION

Freescale Semiconductor Technical Data

RF Power Field Effect Transistor

N - Channel Enhancement - Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
• Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power 30 Watts PEP Power Gain 19 dB Efficiency IMD - dBc
• Capable of Handling 10:1 VSWR, 26 Vdc, 945 MHz, 30 Watts CW Output Power
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates Nominal.
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

MRF9030LSR1
945 MHz, 30 W, 26 V LATERAL N - CHANNEL

BROADBAND RF POWER MOSFET

CASE 360C - 05, STYLE 1 NI - 360S

Table Maximum Ratings Rating

Drain - Source Voltage Gate - Source Voltage Total Device Dissipation TC = 25°C

Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table Thermal Characteristics

Characteristic Thermal Resistance, Junction to Case Table ESD Protection Characteristics

Test Conditions Human Body Model Machine Model

Symbol VDSS VGS PD

Tstg TC TJ

Value - +68 - + 15
117 - 65 to +150 200

Value

Class 1 Minimum M1 Minimum

Unit Vdc W/°C °C °C °C

Unit °C/W

Freescale Semiconductor, Inc., All rights reserved.

RF Device Data Freescale Semiconductor

MRF9030LSR1 1

Table Electrical Characteristics TC = 25°C unless otherwise noted

Characteristic

Off Characteristics

Zero Gate Voltage Drain Leakage Current VDS = 68 Vdc, VGS = 0 Vdc

IDSS

Zero Gate Voltage Drain Leakage Current VDS = 26 Vdc, VGS = 0 Vdc

IDSS

Gate - Source Leakage Current VGS = 5 Vdc, VDS = 0 Vdc

IGSS

On Characteristics

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Datasheet ID: MRF9030LSR1 635612