APTM100U13SG
APTM100U13SG Datasheet
APTM100U13S
| Part | Datasheet |
|---|---|
APTM100U13SG |
APTM100U13SG (pdf) |
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| APTM100U13S Single switch Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = typ Tj = 25°C ID = 65A Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance Absolute maximum ratings Parameter Max ratings Unit VDSS IDM VGS RDSon Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance 1000 Tc = 25°C Tc = 80°C ±30 PD Maximum Power Dissipation Tc = 25°C 1250 IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 2500 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website APTM100U13S All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IDSS Zero Gate Voltage Drain Current RDS on VGS th IGSS Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 32.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V |
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