APT50N60JCU2

APT50N60JCU2 Datasheet

APT50N60JCU2

Part	Datasheet
APT50N60JCU2	APT50N60JCU2 (pdf)

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APT50N60JCU2 Boost chopper Super Junction MOSFET Power Module VDSS = 600V RDSon = 45mΩ max Tj = 25°C ID = 52A Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated • Package SOT-227 • Very low stray inductance • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Parameter VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current IDM VGS RDSon IAR EAR EAS Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current repetitive and non repetitive Avalanche Energy Single Pulse Avalanche Energy Max ratings Unit Tc = 25°C Tc = 80°C ±20 Tc = 25°C 3 1900 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT50N60JCU2 All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS Zero Gate Voltage Drain Current RDS on VGS th IGSS Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current Test Conditions Min Typ Max Unit VGS = 0V,VDS = 600V Tj = 25°C VGS = 0V,VDS = 600V Tj = 125°C 250 µA 500 VGS = 10V, ID = 22.5A 40 45 mΩ VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 100 nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate Source Charge

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APT50N60JCU2

Boost chopper

Super Junction MOSFET Power Module

VDSS = 600V RDSon = 45mΩ max Tj = 25°C ID = 52A Tc = 25°C

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch
- Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated
• Package SOT-227
• Very low stray inductance
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant

Absolute maximum ratings

Parameter

VDSS Drain - Source Breakdown Voltage

ID Continuous Drain Current

IDM VGS RDSon

IAR EAR EAS

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance

Maximum Power Dissipation

Avalanche current repetitive and non repetitive Avalanche Energy Single Pulse Avalanche Energy

Max ratings Unit

Tc = 25°C

Tc = 80°C
±20

Tc = 25°C
3 1900

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

APT50N60JCU2

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

IDSS Zero Gate Voltage Drain Current

RDS on VGS th IGSS

Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current

Test Conditions

Min Typ Max Unit

VGS = 0V,VDS = 600V Tj = 25°C VGS = 0V,VDS = 600V Tj = 125°C
250 µA 500

VGS = 10V, ID = 22.5A
40 45 mΩ

VGS = VDS, ID = 3mA

VGS = ±20 V, VDS = 0V
100 nA

Dynamic Characteristics

Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate Source Charge

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Datasheet ID: APT50N60JCU2 648680