APTGT25DA120D1G

APTGT25DA120D1G Datasheet

APTGT25DA120D1

Part	Datasheet
APTGT25DA120D1G	APTGT25DA120D1G (pdf)

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APTGT25DA120D1 Boost chopper Trench Power Module VCES = 1200V IC = 25A Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 IC Continuous Collector Current TC = 25°C TC = 80°C ICM Pulsed Collector Current TC = 25°C VGE Gate Emitter Voltage ±20 PD Maximum Power Dissipation TC = 25°C Tj = 125°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website APTGT25DA120D1 All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE on Collector Emitter on Voltage VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current Test Conditions VGE = 0V, IC = 4mA 1200 VGE = 0V, VCE = 1200V VGE = 15V IC = 25A Tj = 25°C Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Typ Max Unit V 5 mA V 400 nA

PDF Datasheet Preview

APTGT25DA120D1

Boost chopper

Trench Power Module

VCES = 1200V IC = 25A Tc = 80°C

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction

Features
• Trench + Field Stop Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance - M5 power connectors
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat

Absolute maximum ratings

Parameter

Max ratings Unit

VCES Collector - Emitter Breakdown Voltage
1200

IC Continuous Collector Current

TC = 25°C

TC = 80°C

ICM Pulsed Collector Current

TC = 25°C

VGE Gate Emitter Voltage
±20

PD Maximum Power Dissipation

TC = 25°C

Tj = 125°C

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

APT website

APTGT25DA120D1

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage

ICES Zero Gate Voltage Collector Current

VCE on Collector Emitter on Voltage

VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current

Test Conditions

VGE = 0V, IC = 4mA
1200

VGE = 0V, VCE = 1200V

VGE = 15V IC = 25A

Tj = 25°C Tj = 125°C

VGE = VCE , IC = 1mA

VGE = 20V, VCE = 0V

Typ Max Unit

V 5 mA V 400 nA

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Datasheet ID: APTGT25DA120D1G 648826