DSEC30-02A
DSEC30-02A Datasheet
DSEC 30-02A
| Part | Datasheet |
|---|---|
DSEC30-02A |
DSEC30-02A (pdf) |
| PDF Datasheet Preview |
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| DSEC 30-02A HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x15 A VRRM = 200 V trr = 25 ns VRSM V 200 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight RthJC RthCH trr VRRM V Type A TO-247 AD DSEC 30-02A C TAB A = Anode, C = Cathode, TAB = Cathode Test Conditions TC = 150°C rectangular, d = TC = 115°C rectangular, d = TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = A L = 180 µH VA = 1.5•VR typ. f = 10 kHz repetitive TC = 25°C mounting torque typical r Test Conditions fo TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM t IF = 15 A TVJ = 150°C NoTVJ = 25°C IF = 1 A -di/dt = 100 A/µs VR = 30 V TVJ = 25°C n Maximum Ratings s 140 ne0.8...1.2 • International standard package • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies SMPS • Inductive heating • Uninterruptible power supplies UPS Characteristic Values • Ultrasonic cleaners and welders typ. max. Advantages • Avalanche voltage rated for reliable EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-onlossinthecommutatingswitch VR = 100 V IF = 25 A -diF/dt = 100 A/µs |
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