HUFA76407D3ST

HUFA76407D3ST Datasheet

HUFA76407D3, HUFA76407D3S

Part	Datasheet
HUFA76407D3ST	HUFA76407D3ST (pdf)

Related Parts	Information
HUFA76407D3S	HUFA76407D3S
HUFA76407D3	HUFA76407D3

PDF Datasheet Preview
Data Sheet HUFA76407D3, HUFA76407D3S December 2001 11A, 60V, Ohm, N-Channel, Logic Level Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE SOURCE DRAIN GATE HUFA76407D3 JEDEC TO-252AA DRAIN FLANGE GATE SOURCE HUFA76407D3S • Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PACKAGE BRAND HUFA76407D3 TO-251AA 76407D HUFA76407D3S TO-252AA 76407D NOTE When ordering, use the entire part number. Add the T to obtain the TO-252AA variant in tape and reel, e.g., HUFA76407D3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise HUFA76407D3, HUFA76407D3S UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±16 Drain Current Continuous TC = 25oC, VGS = 5V ID Continuous T C T C T C 21153355oCooCC, V,, Pulsed Drain Current .IDM Figure 4 Pulsed Avalanche Rating .UIS Figures 6, 14, 15 Power Dissipation Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334 Tpkg NOTE: 38 -55 to 175 300 260 W/oC TJ = 25oC to 150oC. CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: 2001 Fairchild Semiconductor Corporation HUFA76407D3, HUFA76407D3S Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BV DSS I DSS I GSS ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12 VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TC = 150oC

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Data Sheet

HUFA76407D3, HUFA76407D3S

December 2001
11A, 60V, Ohm, N-Channel, Logic Level Power MOSFETs

Packaging

JEDEC TO-251AA

DRAIN FLANGE

SOURCE DRAIN GATE

HUFA76407D3

JEDEC TO-252AA DRAIN

FLANGE

GATE SOURCE

HUFA76407D3S
• Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information

PACKAGE

BRAND

HUFA76407D3

TO-251AA
76407D

HUFA76407D3S

TO-252AA
76407D
NOTE When ordering, use the entire part number. Add the T to obtain the TO-252AA variant in tape and reel, e.g., HUFA76407D3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

HUFA76407D3,

HUFA76407D3S

UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±16

Drain Current

Continuous TC = 25oC, VGS = 5V ID

Continuous

T C T C T C
21153355oCooCC, V,,

Pulsed Drain Current .IDM

Figure 4

Pulsed Avalanche Rating .UIS

Figures 6, 14, 15

Power Dissipation Derate Above 25oC

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334 Tpkg

NOTE:
38 -55 to 175
300 260

W/oC

TJ = 25oC to 150oC.

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:
2001 Fairchild Semiconductor Corporation

HUFA76407D3, HUFA76407D3S

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BV DSS I DSS I GSS

ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12

VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TC = 150oC

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Datasheet ID: HUFA76407D3ST 633997