APTGF50H60T2G

APTGF50H60T2G Datasheet

APTGF50H60T2G

Part	Datasheet
APTGF50H60T2G	APTGF50H60T2G (pdf)

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APTGF50H60T2G Full - Bridge NPT IGBT Power Module VCES = 600V IC = 50A Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Pins 5/6/15/16 3/4/17/18 9/10 11/12 must be shorted together All ratings Tj = 25°C unless otherwise specified Absolute maximum ratings per IGBT Parameter VCES Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD RBSOA Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation Max ratings Unit TC = 25°C TC = 80°C TC = 25°C ±20 TC = 25°C Tj = 125°C 100A 500V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF50H60T2G Electrical Characteristics per IGBT Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE sat Collector Emitter Saturation Voltage VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current Test Conditions Min Typ Max Unit VGE = 0V VCE = 600V VGE =15V IC = 50A Tj = 25°C Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V 250 µA 400 nA Dynamic Characteristics per IGBT Symbol Characteristic Cies Coes Cres Qg

PDF Datasheet Preview

APTGF50H60T2G

Full - Bridge NPT IGBT Power Module

VCES = 600V IC = 50A Tc = 80°C

Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Features
• Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• RoHS Compliant

Pins 5/6/15/16 3/4/17/18 9/10 11/12 must be shorted together

All ratings Tj = 25°C unless otherwise specified

Absolute maximum ratings per IGBT

Parameter

VCES Collector - Emitter Breakdown Voltage

IC Continuous Collector Current

ICM VGE PD

RBSOA

Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation

Max ratings

Unit

TC = 25°C

TC = 80°C

TC = 25°C
±20

TC = 25°C

Tj = 125°C 100A 500V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGF50H60T2G

Electrical Characteristics per IGBT

Symbol Characteristic ICES Zero Gate Voltage Collector Current

VCE sat Collector Emitter Saturation Voltage

VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current

Test Conditions

Min Typ Max Unit

VGE = 0V VCE = 600V

VGE =15V IC = 50A

Tj = 25°C Tj = 125°C

VGE = VCE , IC = 1mA

VGE = 20V, VCE = 0V
250 µA
400 nA

Dynamic Characteristics per IGBT

Symbol Characteristic

Cies Coes Cres Qg

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Datasheet ID: APTGF50H60T2G 648802