QSE243

QSE243 Datasheet

QSE243

Part	Datasheet
QSE243	QSE243 (pdf)

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LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE243 PACKAGE DIMENSIONS EMITTER SQ. 2X SCHEMATIC Collector Emitter Dimensions for all drawings are in inches millimeters . Tolerance of ± on all non nominal dimensions unless otherwise specified. The QSE243 is a silicon phototransistor with low light level rejection, encapsulated in a medium angle, thin clear plastic sidelooker package. • NPN Silicon Phototransistor with internal base-emitter resistance • Package Type Sidelooker • Medium Reception Angle, 50° • Clear Plastic Package • Matching Emitter QEE213 2001 Fairchild Semiconductor Corporation DS300288 9/20/01 1 OF 3 LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE243 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 2,3,4 Soldering Temperature Flow 2,3 Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 1 TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to + 100 -40 to + 100 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V mW ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C Parameter Test Conditions Peak Sensitivity Reception Angle Collector Emitter Dark Current Collector Emitter Breakdown VCE = 15 V, Ee = 0 IC = 100 µA BVCEO Saturation Voltage Ee = 1 mW/cm2 IC = mA 5 VCE sat Rise Time VCC = 5 V, RL = 1000 V Fall Time IC = 1 mA Light Current Slope 6 Knee Point 5,7 VCE = 5 V, Ee1 = 1 mW/cm2 5 Ee2 = mW/cm2 5 VCE = 5 V Typ 880 ±25 15 Units

PDF Datasheet Preview

LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR

QSE243

PACKAGE DIMENSIONS

EMITTER

SQ. 2X

SCHEMATIC

Collector

Emitter

Dimensions for all drawings are in inches millimeters . Tolerance of ± on all non nominal dimensions
unless otherwise specified.

The QSE243 is a silicon phototransistor with low light level rejection, encapsulated in a medium angle, thin clear plastic sidelooker package.
• NPN Silicon Phototransistor with internal base-emitter resistance
• Package Type Sidelooker
• Medium Reception Angle, 50°
• Clear Plastic Package
• Matching Emitter QEE213
2001 Fairchild Semiconductor Corporation DS300288 9/20/01
1 OF 3

LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR

QSE243

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified

Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 2,3,4 Soldering Temperature Flow 2,3 Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 1

TOPR TSTG TSOL-I TSOL-F VCE VEC PD

Rating -40 to + 100 -40 to + 100 240 for 5 sec 260 for 10 sec
30 5 100

Unit °C °C °C °C V mW

ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C

Parameter

Test Conditions

Peak Sensitivity Reception Angle

Collector Emitter Dark Current Collector Emitter Breakdown

VCE = 15 V, Ee = 0 IC = 100 µA

BVCEO

Saturation Voltage

Ee = 1 mW/cm2 IC = mA 5

VCE sat

Rise Time

VCC = 5 V, RL = 1000 V

Fall Time

IC = 1 mA

Light Current Slope 6 Knee Point 5,7

VCE = 5 V, Ee1 = 1 mW/cm2 5 Ee2 = mW/cm2 5

VCE = 5 V

Typ 880 ±25 15

Units

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Datasheet ID: QSE243 634536